Titanium dioxide

 Titanium dioxide Thin Films

(Prof. Levent Trabzon, Associate Prof. Huseyin Kizil, Associate Prof. Hulya Cebeci, Houman Bahmani Jalali)

 Titanium dioxide has a great interest in metal oxide semiconductors due to the wide bandgap. The main disadvantages of the pure TiO2 are low efficiency under irradiation in the visible light and undesirable recombination of the electrons and holes. Its band edge lies in the UV region which makes it inactive under visible light irradiation. One of the methods for visible light activation of TiO2 is doping through chemical routes such as sol-gel process. In this manner, several samples with different dopant types and concentration are preparing and investigating to optimize the TiO2 films structural, mechanical and optical properties.
For instance, Fe-doping in TiO2 generates impurity states within its bandgap and shifts the absorption edge to the visible light region. In this study, Fe-doped TiO2 films were successfully prepared via sol-gel method through hydrolysis and polymerization. Dip-coating method was used to fabricate thin films. Various samples with different amount of iron were prepared and characterized by X-ray diffraction, profilometer, Fourier transform infrared spectroscopy, UV-Vis spectroscopy.